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Solid SiC, which has been developed by our unique technology, is a super high purity SiC made by Chemical Vapor Deposition process.

FEATURES
  • Super High Purity
  • Excellent Chemical Resistance
  • Very Little Metal Diffusion
  • No Outgassing
  • Theoretical Density (β-SiC)

APPLICATIONS
  • Wafer Carriers
  • Susceptors, Dummy Wafer
  • Guide Rings
  • Parts for Etching System, etc.

TYPICAL PROPERTIES Solid SiC UNITS
Density 3.21 g/cm3
Flexural Strength 590 MPa
Youngs Modulus 450 GPa
Vickers Hardness 26 GPa
Electrical Resistivity 1 μΩm
Thermal Conductivity(RT) 250 W/mK
C.T.E(RT-1000°C) 4.0 ×10-6/K

TYPICAL IMPURITIES
  Al Ca Cr Cu Fe K Na Ni Ti V
ppb 20 16 9 13 31 58 3 6 3 <1



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